It looks like you're using an Ad Blocker.
Please white-list or disable AboveTopSecret.com in your ad-blocking tool.
Some features of ATS will be disabled while you continue to use an ad-blocker.
By using electric voltage instead of a flowing electric current, researchers from UCLA's Henry Samueli School of Engineering and Applied Science have made major improvements to an ultra-fast, high-capacity class of computer memory known as magnetoresistive random access memory, or MRAM.
The UCLA team's improved memory, which they call MeRAM for magnetoelectric random access memory, has great potential to be used in future memory chips for almost all electronic applications, including smart-phones, tablets, computers and microprocessors, as well as for data storage, like the solid-state disks used in computers and large data centers.
MeRAM's key advantage over existing technologies is that it combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility — the ability to retain data when no power is applied, similar to hard disk drives and flash memory sticks, but MeRAM is much faster.
"Ultra-low–power spintronic devices such as this one have potential implications beyond the memory industry," Wang said. They can enable new instant-on electronic systems, where memory is integrated with logic and computing, thereby completely eliminating standby power and greatly enhancing their functionality."
Originally posted by Attentionwandered
reply to post by Raelsatu
Seeing as how memory may be approaching the atomic limit one day, I wonder how Ultra-dense this really is.
Good find though, instant on devices are something that could save this country millions in electricity. ATS please remember NOT to use sleep modes and turn your computers off at night!