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originally posted by: soundguy
The word of the day as it applies to right wingers....... Obfuscation.
But I’m sure that this is it. The one... Hillary’s toast. Lol... Btw, how many people in the Obama administration were indicted? Oh that’s right........
a reply to: burdman30ott6
However, due to SPM limitations, only slow and reduced area Flash EEP- ROM cell measurements are documented to date. The main drawbacks of SPM techniques are the low scanning speed, the small area covered, replacement of the tip, and an operator intervention to read a full memory array. This results in an impractical technique of reading out the complete memory of several mm2. Whereas in the security community, Scanning Electron Microscopy has been re- cently used for hardware trojan detection   and for spatially resolved laser fault injection . Following those investigations, we show in this paper how Flash EEPROM contents commonly thought unreachable are retrieved using artefact free backside sample preparation, fined tuned SEM acquisitions (Volt- age Contrast mode) and efficient image processing. Voltage Contrast imaging is one of the first use of Scanning Electron Mi- croscope . The depicted technique is actually based on a mode which corre- sponds to the setup where no external bias is applied to the sample while setup parameters permit to obtain various information on the sample. In the litera- ture, one can also find PVC variants as Capacitive Coupling Voltage Contrast (CCVC)  and Low Energy Electron Microscopy (LEEM) . After a primary electron beam hits a specimen surface, a secondary elec- tron signal results from the sample interaction. This collected signal depends on the primary beam features, the sample’s atomic number, the nature of the area scanned, the doping level, short/open circuit  and as depicted in this communication the presence of local charges trapped in an oxide. We thus open to the academic community the technique where floating gate accumulated electrons (image of ‘0’ and ‘1’ memory cell content) can be probed by SEM as illustrated in Figure 1. It can be seen as a first step for secure IC reverse engineering investigations.
originally posted by: TheRedneck
a reply to: BigDave-AR
That is... interesting. With the cost and slow speed of an electron microscope, it seems almost impossible, definitely impractical, to do this. The only way the data stored in flash memory could be retrieved this way is to literally examine the ionic contents of current paths.
We're talking about literally counting electrons, lol.
Even after they read the contents, that is still just machine code. It still has to be analyzed to determine what it means... which is possible of course, just another difficulty in the process.
I still don't see how this process could be applied to the vast number of integrated circuits used in military applications, though. That's an un-Godly amount of time and resources!
originally posted by: wantsome
Republicans have been in full control the past 2 years. They got 2 supreme court picks. If they had half the dirt the on Clintons that the FBI has on Trump they would have hanged by now. I swear Republicans will still be squealing about the Clinton's in 2028. Is Obama still coming for your guns?
The EU oligarchs, politicians and royals are terrified by the prospects of having a 5G network operational, because that would not trigger their planned stock market bubble bust on electronics and IT, that they have been carefully engineering.